info@bitchipsemiconductors.com

+91-91527 43505

Diode

TRADERS SUPPLIERS & STOCKIST

1N4148 DO35 HORNBY

1N4148 diode is a high-speed switching diode with small size and fast switching. Its applications mainly include single supply isolation for high-frequency signal circuits, industrial control circuits, computer boards, communication, TV, etc.

1N4007S-A405 HORNBY

Low forward voltage drop A-405
High current capability
High capability
High surge current capability
Exceeds environmental standards of MIL-S-19500/228

GBU810

Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 200A Peak
Ideal for Printed Circuit Board Applications

DB107

Termination Style: Solder Pin
Package/Case: DB-1
If - Forward Current: 1 A
Peak Reverse Voltage: 1 kV
Vf - Forward Voltage: 1.1 V
Max Surge Current: 40 A
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

DB107S

Termination Style: Solder Pad
Package/Case: DBS
If - Forward Current: 1 A
Peak Reverse Voltage: 1 kV
Vf - Forward Voltage: 1.1 V
Max Surge Current: 40 A
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

KBP310

The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension

KBP210

Molded Plastic Casing
Low forward voltage drop
Glass Passivated to reduce leakage current
High surge current capability, hence reliable

GBJ1508

Voltage - Peak Reverse (Max)800 V
Current - Average Rectified (Io)15 A
Voltage - Forward (Vf) (Max) @ If1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr 10 µA @ 800 V
Operating Temperature -65°C ~ 150°C (TJ)

GBJ1508

Voltage - DC Reverse (Vr) (Max) 150 V
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 1 mA @ 150 V
Operating Temperature - Junction -55°C ~ 150°C

MBRF30100SCT

Center tap configuration
Low forward voltage drop
High purity, high temperature

MBR30100CT

High Surge Current Capability
Low Forward Voltage Drop

MBRF20150SCT

High Surge Current Capability
Low Forward Voltage Drop

MBR2060CT

Vf - Forward Voltage: 950 mV
Ifsm - Forward Surge Current: 180 A
Ir - Reverse Current: 1 mA
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

P6KE200A

Number of Channels: 1 Channel
Working Voltage: 171 V
Termination Style: Axial
Clamping Voltage: 353 V
Breakdown Voltage: 190 V
Package/Case: DO-204AC-2
Ipp - Peak Pulse Current: 11.3 A
Pppm - Peak Pulse Power Dissipation: 600 W

P6KE15CARL

Number of Channels: 1 Channel
Working Voltage: 12.8 V
Termination Style: Axial
Clamping Voltage: 21.2 V
Breakdown Voltage: 14.3 V
Package/Case: DO-204AC-2
Ipp - Peak Pulse Current: 28.8 A
Pppm - Peak Pulse Power Dissipation: 600 W

STPS3045CP

If - Forward Current: 30 A (2 x 15 A)
Vrrm - Repetitive Reverse Voltage: 45 V
Vf - Forward Voltage: 840 mV
Ifsm - Forward Surge Current: 220 A
Ir - Reverse Current: 200 uA
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 175 C

VS-30CPT100

If - Forward Current: 30 A (2 x 15 A)
Vrrm - Repetitive Reverse Voltage: 100 V
Vf - Forward Voltage: 920 mV
Ifsm - Forward Surge Current: 920 A
Ir - Reverse Current: 120 uA
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

STPS30H100CW

Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 15A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 15 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Operating Temperature - Junction -40°C ~ 175°C

SBL4060PT

Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free

STPS20170CFP

Technology: Si
If - Forward Current: 20 A
Vrrm - Repetitive Reverse Voltage: 170 V
Vf - Forward Voltage: 990 mV
Ifsm - Forward Surge Current: 180 A
Ir - Reverse Current: 15 uA

MURF1660CTG

Ultrafast 60 Nanosecond Recovery Times
150°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
High Temperature Glass Passivated Junction
Low Leakage Specified @ 150°C Case Temperature
Current Derating @ Both Case and Ambient Temperatures

MBR3045CT

150 °C TJ operation
low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term reliability
Designed and qualified according to JEDEC®-JESD 47

MBRF1645CT

High surge capacity.
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.

MBR1560CT

Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

MBR1045

Power pack
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package)

MUR1660CT

Type: Fast Recovery Rectifiers
Configuration: Dual Common Cathode
Vf - Forward Voltage: 1.5 V
Max Surge Current: 100 A
Ir - Reverse Current: 10 uA
Recovery Time: 50 ns
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

MUR1620CT

Type: Fast Recovery Rectifiers
Configuration: Dual Common Cathode
Vf - Forward Voltage: 1.5 V
Max Surge Current: 100 A
Ir - Reverse Current: 10 uA

MURH860CT

Type: Fast Recovery Rectifiers
175°C Operating Junction Temperature
Popular TO-220 Package
Epoxy Meets UL 94 V−0 @ 0.125 in
High Temperature Glass Passivated Junction
High Voltage Capability to 600 V
Low Leakage Specified @ 150°C Case Temperature

MUR860

Ultrafast Recovery trr = 70 ns (@ IF = 8 A)
Max Forward Voltage, VF = 1.5 V (@ TC = 25°C)
400 V, 600 V Reverse Voltage and High Reliability
RoHS Compliant
Avalanche Energy Rated

30CTP060

If - Forward Current: 30 A
Vrrm - Repetitive Reverse Voltage: 60 V
Vf - Forward Voltage: 820 mV
Ifsm - Forward Surge Current: 1 kA
Ir - Reverse Current: 800 uA
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

GBU808

Peak Reverse Voltage: 800 V
Vf - Forward Voltage: 1 V
Max Surge Current: 200 A
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Length: 22.3 mm

KIA7809AP

UNIT V
KIA7805AP~KIA7824AP
BIPOLAR LINEAR INTEGRATED CIRCUIT MAXIMUM RATINGS (Ta=25)
CHARACTERISTIC
Input Voltage KIA7805~ KIA7815 KIA7818~ KIA7824
Power Dissipation-1 (No Heatsink)
Power Dissipation-2 (Infinite Heatsink)

DF08M

Diode Type Single Phase
Technology Standard
Current - Average Rectified (Io) 1 A
Voltage - Peak Reverse (Max) 800 V
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
Current - Reverse Leakage @ Vr 10 µA @ 800 V
Operating Temperature -65°C ~ 150°C (TJ)

DF06M

Type: Single Phase Bridge
Mounting Style: Through Hole
Termination Style: Solder Pin
Package/Case: DFM
Peak Reverse Voltage: 600 V
Vf - Forward Voltage: 1.1 V
Max Surge Current: 50 A
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C

We are Manufacturers & Exporters of Temperature Sensor in very wide range of Different Industries. since more than a decade.

GET IN TOUCH

	3A, 3RD FLOOR 399/399A, MANEK CHAMBERS DR. D.B MARG, MUMBAI - 400004
	+91-9152743505 +91-9321743505 +91-8591743505
	info@bitchipsemiconductors.com

FOLLOW US

Copyright © 2026 BITCHIP SEMICONDUCTOR. | Designing by TESRON WEBTECH.